光半導体用窓ガラス

Window glass for optical semiconductor

Abstract

(57)【要約】 【課題】 広い入射角に対して反射防止が可能な光半導 体用窓ガラスを提供する。 【解決手段】 本発明の光半導体用窓ガラス1は、表面 に反射防止膜2を備え、入射角θが0°〜60°で入射 した光に対して90%以上の光透過率を有し、光半導体 用パッケージ3の窓孔部3aをカバーする。
PROBLEM TO BE SOLVED: To obtain window glass having high transmittance of light which prevents reflection of light with a wide incident angle by forming a multilayered antireflection film on the surface to have specified or higher transmittance of light entering at a specified incident angle. SOLUTION: This glass is window glass 1 for an optical semiconductor which covers the window hole 3a of an optical semiconductor package 3, and the glass has a multilayered antireflection film 2 on its surface. The glass transmits light incident at 0 to 50 incident angel by ≥90% transmittance. As for the material of the antireflection film, for example, TiO2, MgF2, Al2O3, ZrO2 and Ta2O5 can be used for high refractive index layers, and for example, SiO2 and TiO2 can be used for low refractive index layers. As for the combination of these, for example, combination of TiO2 and SiO2, or MgF2 and SiO2 can be used. The high refractive index material and the low refractive index material are alternately deposited to form the multilayered film, and the obtd. multilayered film is applied on both surfaces of the window glass 1 for the semiconductor to obtain the antireflection film 2. Preferably, the multilayered film is formed to have at least 4 layers on one surface and 8 or more layers on both surfaces. COPYRIGHT: (C)2000,JPO

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Cited By (4)

    Publication numberPublication dateAssigneeTitle
    JP-2005332947-ADecember 02, 2005Nippon Electric Glass Co Ltd, 日本電気硝子株式会社光素子用窓部品
    JP-2009088261-AApril 23, 2009Fujifilm Corp, 富士フイルム株式会社Back irradiation type solid-state imaging element, and manufacturing method thereof
    JP-4696104-B2June 08, 2011富士フイルム株式会社裏面照射型固体撮像素子及びその製造方法
    US-9360204-B2June 07, 2016Panasonic CorporationLight-emitting device